Dynamic device characteristics and linewidth measurement of InGaN/GaN laser diodes

Gwyn, S. et al. (2021) Dynamic device characteristics and linewidth measurement of InGaN/GaN laser diodes. IEEE Photonics Journal, 13(1), 1500510. (doi: 10.1109/JPHOT.2020.3045218)

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Abstract

We report on the characterization and analysis of a GaN-based distributed feedback laser diode (DFB-LD) with 3 rd -order laterally etched sidewall gratings centered at a wavelength of 420 nm. We also compare the device parameters with two commonly used Fabry-Perot (FP) devices operating at 450 nm and 520 nm. Intrinsic properties of the devices were extracted, including damping factor, carrier and photon lifetimes, modulation efficiency, differential gain, and parasitic capacitance. These parameters showed that the DFB exhibits a lower damping rate and parasitic capacitance while demonstrating a higher modulation efficiency, indicating that the DFB shows good potential for communications applications. Additionally, spectral linewidth of a GaN DFB is reported. To the authors’ knowledge, this is the first demonstration of parameter extraction and spectral linewidth measurement for GaN-based DFB-LDs.

Item Type:Articles
Additional Information:This research has been supported by the European Union with grant E113162, Innovate UK through grant 132543, the National Centre for Research and Development with grant E113162/NCBiR/2020, and the Engineering and Physical Sciences Research Council (RCUK Grant no. EP/L015323/1).
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Ivanov, Dr Pavlo and Viola, Mr Shaun and Zhang, Dr Weikang and Watson, Dr Scott and Gwyn, Mr Steffan and Haji, Dr Mohsin and Kelly, Professor Anthony
Authors: Gwyn, S., Watson, S., Slight, T., Knapp, M., Viola, S., Ivanov, P., Zhang, W., Yadav, A., Rafailov, E., Haji, M., Doherty, K. E., Stanczyk, S., Grzanka, S., Perlin, P., Najda, S. P., Leszczyński, M., and Kelly, A. E.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Journal
Publisher:IEEE
ISSN:1943-0647
ISSN (Online):1943-0655
Published Online:16 December 2020
Copyright Holders:Copyright © 2020 The Authors
First Published:First published in IEEE Photonics Journal 13(1): 1500510
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
172610External engagement manager: CDT Photonic Integration for Advanced Data StorageJohn MarshEngineering and Physical Sciences Research Council (EPSRC)EP/L015323/1ENG - Electronics & Nanoscale Engineering