Quantum simulation investigation of work-function variation in nanowire tunnel FETs

Guan, Y., Carrillo-Nuñez, H., Georgiev, V. P. , Asenov, A. , Liang, F., Li, Z. and Chen, H. (2021) Quantum simulation investigation of work-function variation in nanowire tunnel FETs. Nanotechnology, 32(15), 150001. (doi: 10.1088/1361-6528/abd125) (PMID:33285530)

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Abstract

The variability induced by the work-function variation (WFV) in p-type ultra-scaled nanowire tunnel FET (TFET) has been studied by using the Non-Equilibrium Green's Function module implemented in University of Glasgow quantum transport simulator called NESS. To provide a thorough insight into the influence of WFV, we have simulated 250 atomistically different nanowire TFETs and the obtained results are compared to nanowire MOSFETs first. Our statistical simulations reveal that the threshold voltage (Vth) variations of MOSFETs and TFETs are comparable, whereas the on-current (Ion) and off-current (Ioff) variations of TFETs are smaller and higher, respectively in comparison to the MOSFET. Based on the results of the simulations, we have provided a physical insight into the variations of the Ion and Ioff currents. Then, we compared the nanowire and Fin TFETs structures with different oxide thickness in terms of the WFV-induced variability. The results show that WFV has a strongest impact on the Ioff, and moderate effect on the Ion and Vth in nanowire TFET with smaller oxide thickness. Lastly, it is found that compared with the random discrete dopants, WFV is a relatively weaker variability source in ultra-scaled nanowire TFETs, especially from the point of view of Ion variation.

Item Type:Articles
Additional Information:This work was supported in part by the National Natural Science Foundation of China under Grant 61176038 and Grant 61474093, Natural Science Basic Research Program of Shaanxi Province, China (Grant No. 2020JM-581), Key Research and Development Program of Shaanxi Province, China (Grant No. 2020GY-048). Yunhe Guan is indebted to the China Scholarship Council (CSC) for its financial support as a visiting student at the University of Glasgow, UK. This project has also received funding from EPSRC UKRI Innovation Fellowship scheme under grant agreement No. EP/S001131/1 (QSEE) and EPSRC UKRI with grant agreement No. EP/P009972/1 (QUANTDEVMOD).
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Carrillo-Nunez, Dr Hamilton and Georgiev, Dr Vihar and Guan, Yunhe and Asenov, Professor Asen
Authors: Guan, Y., Carrillo-Nuñez, H., Georgiev, V. P., Asenov, A., Liang, F., Li, Z., and Chen, H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Nanotechnology
Publisher:IOP Publishing
ISSN:0957-4484
ISSN (Online):1361-6528
Published Online:25 January 2021
Copyright Holders:Copyright © 2021 IOP Publishing Ltd
First Published:First published in Nanotechnology 32(15):150001
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
302377Quantum Simulator for Entangled Electronics (QSEE)Vihar GeorgievEngineering and Physical Sciences Research Council (EPSRC)EP/S001131/1ENG - Electronics & Nanoscale Engineering
173715Quantum Electronics Device Modelling (QUANTDEVMOD)Vihar GeorgievEngineering and Physical Sciences Research Council (EPSRC)EP/P009972/1ENG - Electronics & Nanoscale Engineering