Hou, L. , Tang, S. and Marsh, J. (2021) Monolithic DWDM source with precise channel spacing. Journal of Semiconductors, 42(4), 042301. (doi: 10.1088/1674-4926/42/4/042301)
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Abstract
We report a low-cost manufacturing approach for fabricating monolithic multi-wavelength sources for dense wavelength division multiplexing (DWDM) systems that offers high yield and eliminates crystal regrowth and selective area epitaxy steps that are essential in traditional fabrication methods. The source integrates an array of distributed feedback (DFB) lasers with a passive coupler and semiconductor optical amplifier (SOA). Ridge waveguide lasers with sampled Bragg side wall gratings have been integrated using quantum well intermixing to achieve a fully functional four-channel DWDM source with 0.8 nm wavelength spacing and residual errors < 0.13 nm. The output power from the SOA is > 10 mW per channel making the source suitable for use in passive optical networks (PONs). We have also investigated using multisection phase-shifted sampled gratings to both increase the effective grating coupling coefficient and precisely control the channel lasing wavelength spacing. An 8-channel DFB laser array with 100 GHz channel spacing was demonstrated using a sampled grating with two π-phase-shifted sections in each sampling period. The entire array was fabricated by only a single step of electron beam lithography.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Tang, Mr Song and Hou, Dr Lianping and Marsh, Professor John |
| Authors: | Hou, L., Tang, S., and Marsh, J. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering College of Science and Engineering > School of Engineering > Systems Power and Energy |
| Journal Name: | Journal of Semiconductors |
| Publisher: | IOP Publishing |
| ISSN: | 1674-4926 |
| ISSN (Online): | 2058-6140 |
| Copyright Holders: | Copyright © 2021 IOP Publishing |
| First Published: | First published in Journal of Semiconductors 42(4):042301 |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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