Simulation of Gated GaAs-AlGaAs Resonant Tunneling Diodes for Tunable Terahertz Communication Applications

Georgiev, V.P. , Sengupta, A. , Maciazek, P., Badami, O., Medina-Bailon, C., Dutta, T. , Adamu-Lema, F. and Asenov, A. (2020) Simulation of Gated GaAs-AlGaAs Resonant Tunneling Diodes for Tunable Terahertz Communication Applications. In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020, pp. 241-244. ISBN 9784863487635 (doi:10.23919/SISPAD49475.2020.9241677)

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Abstract

In this work, we report simulations on a GaAs-AlGaAs gated nanowire resonant tunneling diode (RTD) for tunable terahertz communication applications. All calculations are performed with the self-consistent Non-Equilibrium Green’s Function (NEGF) quantum transport formalism implemented in our in-house Nano-Electronic Simulation Software (NESS). Our simulations successfully capture the detailed picture of the quantum mechanical effects such as quantum confinement and resonant tunneling of electrons through barriers in such structures. Moreover, we report for the first time the correlation between the gate-bias voltage and the position of the resonant peak (VR) in the current - voltage characteristics. Such Vr, which is associated with tunneling effects in RTD, could lead to tunable terahertz generation and detection for communication applications.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Dutta, Dr Tapas and Sengupta, Dr Amretashis and Asenov, Professor Asen and Medina Bailon, Miss Cristina and Badami, Mr Oves and Adamu-Lema, Dr Fikru and Georgiev, Dr Vihar
Authors: Georgiev, V.P., Sengupta, A., Maciazek, P., Badami, O., Medina-Bailon, C., Dutta, T., Adamu-Lema, F., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Engineering > Systems Power and Energy
ISSN:1946-1577
ISBN:9784863487635
Copyright Holders:Copyright © 2020 The Japan Society of Applied Physics
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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