High sensitivity Ge-on-Si single-photon avalanche diode detectors

Ferre Llin, L. et al. (2020) High sensitivity Ge-on-Si single-photon avalanche diode detectors. Optics Letters, 45(23), pp. 6406-6409. (doi: 10.1364/OL.396756)

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Abstract

The performance of planar geometry Ge-on-Si single-photon avalanche diode detectors of 26µm diameter is presented. Record low dark count rates are observed, remaining less than 100 K counts per second at 6.6% excess bias and 125 K. Single-photon detection efficiencies are found to be up to 29.4%, and are shown to be temperature insensitive. These performance characteristics lead to a significantly reduced noise equivalent power (NEP) of 7.7×10−17WHz−12 compared to prior planar devices, and represent a two orders of magnitude reduction in NEP compared to previous Ge-on-Si mesa devices of a comparable diameter. Low jitter values of 134±10ps are demonstrated.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Dumas, Dr Derek and Kirdoda, Mr Jaroslaw and Ferre Llin, Dr Lourdes and Paul, Professor Douglas and Millar, Dr Ross and Thorburn, Dr Fiona
Authors: Ferre Llin, L., Kirdoda, J., Thorburn, F., Huddleston, L. L., Greener, Z. M., Zuzmenko, K., Vines, P., Dumas, D. C.S., Millar, R. W., Buller, G. S., and Paul, D. J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Optics Letters
Publisher:Optical Society of America
ISSN:0146-9592
ISSN (Online):1539-4794
Copyright Holders:Copyright © 2020 Optical Society of America
First Published:First published in Optics Letters 45(23):6406-6409
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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