Ferre Llin, L. et al. (2020) High sensitivity Ge-on-Si single-photon avalanche diode detectors. Optics Letters, 45(23), pp. 6406-6409. (doi: 10.1364/OL.396756)
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Abstract
The performance of planar geometry Ge-on-Si single-photon avalanche diode detectors of 26µm diameter is presented. Record low dark count rates are observed, remaining less than 100 K counts per second at 6.6% excess bias and 125 K. Single-photon detection efficiencies are found to be up to 29.4%, and are shown to be temperature insensitive. These performance characteristics lead to a significantly reduced noise equivalent power (NEP) of 7.7×10−17WHz−12 compared to prior planar devices, and represent a two orders of magnitude reduction in NEP compared to previous Ge-on-Si mesa devices of a comparable diameter. Low jitter values of 134±10ps are demonstrated.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Millar, Dr Ross and Ferre Llin, Dr Lourdes and Thorburn, Dr Fiona and Paul, Professor Douglas and Dumas, Dr Derek and Kirdoda, Mr Jaroslaw |
| Authors: | Ferre Llin, L., Kirdoda, J., Thorburn, F., Huddleston, L. L., Greener, Z. M., Zuzmenko, K., Vines, P., Dumas, D. C.S., Millar, R. W., Buller, G. S., and Paul, D. J. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Optics Letters |
| Publisher: | Optical Society of America |
| ISSN: | 0146-9592 |
| ISSN (Online): | 1539-4794 |
| Copyright Holders: | Copyright © 2020 Optical Society of America |
| First Published: | First published in Optics Letters 45(23):6406-6409 |
| Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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