Improvement of the deep UV sensor performance of a β-Ga2O3 photodiode by coupling of two planar diodes

Vieira, D. H., Badiei, N., Evans, J. E., Alves, N., Kettle, J. and Li, L. (2020) Improvement of the deep UV sensor performance of a β-Ga2O3 photodiode by coupling of two planar diodes. IEEE Transactions on Electron Devices, 67(11), pp. 4947-4952. (doi: 10.1109/TED.2020.3022341)

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Abstract

β -Ga 2 O 3 is one of the promising semiconductor materials that has been widely used in power electronics and ultraviolet (UV) detectors due to its wide bandgap and high sensitivity to UV light. Specifically, for the UV detection application, it has been reported that the photocurrent was in the scale of microamps ( μA ), which normally requires sophisticated signal processing units. In this work, a novel approach based upon coupling of two Schottky diodes is reported, leads to a substantial increase in photocurrent (~186 times) when benchmarked against a conventional planar UV photodiode. The detectivity and responsivity of the new device have also been significantly increased; the rectification ratio of this device was measured to be 1.7×107 with ultralow dark current, when measured in the reverse bias. The results confirm that the approach of coupling two Schottky diodes has enormous potential for improving the optical performance of deep UV sensors.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Kettle, Dr Jeff
Authors: Vieira, D. H., Badiei, N., Evans, J. E., Alves, N., Kettle, J., and Li, L.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:IEEE
ISSN:0018-9383
ISSN (Online):0018-9383
Published Online:21 September 2020
Copyright Holders:Copyright © 2020 IEEE
First Published:First published in IEEE Transactions on Electron Devices 67(11):4947-4952
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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