A Kinetic Monte Carlo study of retention time in a POM molecule-based flash memory

Badami, O., Sadi, T., Adamu-Lema, F., Lapham, P., Mu, D., Nagy, D. , Georgiev, V. , Ding, J. and Asenov, A. (2020) A Kinetic Monte Carlo study of retention time in a POM molecule-based flash memory. IEEE Transactions on Nanotechnology, 19, pp. 704-710. (doi: 10.1109/TNANO.2020.3016182)

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Abstract

The modelling of conventional and novel memory devices has gained significant traction in recent years. This is primarily because the need to store increasingly larger amount of data demands a better understanding of the working of the novel memory devices, to enable faster development of the future technology generations. Furthermore, in-memory computing is also of great interest from the computational perspectives, to overcome the data transfer bottleneck that is prevalent in the von-Neumann architecture. These important factors necessitates the development of comprehensive TCAD simulation tools that can be used for modeling carrier dynamics in the gate oxides of the Flash type memory cells. In this work, we introduce the kinetic Monte Carlo module that we have developed and integrated within the Nano Electronic Simulation Software (NESS) - to model electronic charge transport in Flash memory type structures. Using the developed module, we perform retention time analysis for a polyoxometalate (POM) molecule-based charge trap flash memory. Our simulation study highlights that retention characteristics for the POM molecules has a unique features that depends on the properties of the tunneling oxide.

Item Type:Articles
Additional Information:This work is partly supported by NSFC project (Project No.61604105).
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Lapham, Paul and Ding, Miss Jie and Nagy, Dr Daniel and Asenov, Professor Asen and Badami, Mr Oves and Georgiev, Dr Vihar and Adamu-Lema, Dr Fikru and Sadi, Dr Toufik
Authors: Badami, O., Sadi, T., Adamu-Lema, F., Lapham, P., Mu, D., Nagy, D., Georgiev, V., Ding, J., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Nanotechnology
Publisher:IEEE
ISSN:1536-125X
ISSN (Online):1941-0085
Copyright Holders:Copyright © 2020 IEEE
First Published:First published in IEEE Transactions on Nanotechnology 19:704-710
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
301527Variability-aware RRAM PDK for design based research on FPGA/neuro computingAsen AsenovEngineering and Physical Sciences Research Council (EPSRC)EP/S000224/1ENG - Electronics & Nanoscale Engineering
302377Quantum Simulator for Entangled Electronics (QSEE)Vihar GeorgievEngineering and Physical Sciences Research Council (EPSRC)EP/S001131/1ENG - Electronics & Nanoscale Engineering