EML Based on Lumped Configuration, Identical Epitaxial Layer and HSQ Planarization

Al-Moathin, A., Hou, L. , Di Gaetano, E. and Marsh, J. H. (2020) EML Based on Lumped Configuration, Identical Epitaxial Layer and HSQ Planarization. In: 5th International Conference on the UK-China Emerging Technologies (UCET 2020), Glasgow, UK, 20-21 Aug 2020, ISBN 9781728194882 (doi:10.1109/UCET51115.2020.9205351)

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Abstract

We present a new electro-absorption modulated laser based on a lumped configuration, identical epitaxial layer scheme, and a new low-permittivity planarization method. The design of the device is intended to offer a high modulation frequency using a simple and cheap fabrication process. A thick-film of HSQ spinon coating was used to planarize the device and enable a low capacitance contact to the p-side. A 6−μm−thick planarized HSQ layer was fabricated and used to implement the electrode to the electroabsorption modulator.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and Al-Moathin, Ali and Di Gaetano, Mr Eugenio and Hou, Dr Lianping
Authors: Al-Moathin, A., Hou, L., Di Gaetano, E., and Marsh, J. H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISBN:9781728194882
Copyright Holders:Copyright © 2020 IEEE
First Published:First published in 2020 International Conference on UK-China Emerging Technologies (UCET)
Publisher Policy:Reproduced in accordance with the publisher copyright policy
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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
172610External engagement manager: CDT Photonic Integration for Advanced Data StorageJohn MarshEngineering and Physical Sciences Research Council (EPSRC)EP/L015323/1ENG - Electronics & Nanoscale Engineering