Simulation of Si Nanowire Quantum-Dot Devices for Authentication

Carrillo-Nunez, H., Wang, C., Asenov, A. , Young, R. and Georgiev, V. (2019) Simulation of Si Nanowire Quantum-Dot Devices for Authentication. In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France, 01-03 Apr 2019, ISBN 9781728116587 (doi: 10.1109/EUROSOI-ULIS45800.2019.9041864)

Abstract

This paper shows quantum mechanical simulations of quantum-dots (QDs) embedded within Si nanowires. To capture the effect of statistical sources of variability, we simulated 60 wires with differing numbers and positions of dopants, not only in the quantum dot but also at the source and the drain regions also. Our work shows that the specific number of dopants and their positions give rise to unique current-voltage characteristics, providing unique signatures for use as the basis of physical unclonable functions (PUFs). Adoption of hardware security devices for authentication is on the rise; the technology proposed here delivers a practical means to extract fingerprints from quantum confined systems that could provide robust security to silicon electronics.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Carrillo-Nunez, Dr Hamilton and Asenov, Professor Asen and Georgiev, Professor Vihar
• Authors: Carrillo-Nunez, H., Wang, C., Asenov, A., Young, R., and Georgiev, V.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISSN: 2472-9132
• ISBN: 9781728116587
• Published Online: 19 March 2020
• Copyright Holders: Copyright © 2019 IEEE
• First Published: First published in 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
• Publisher Policy: Reproduced in accordance with the publisher copyright policy

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