An implementation of hot-swap circuit with high reliability

Lia, D., Lia, Z., Li, W., Fan, H., Wang, C., Che, H., Zeng, X., Feng, Q. and Heidari, H. (2020) An implementation of hot-swap circuit with high reliability. Microelectronics Journal, 100, 104777. (doi: 10.1016/j.mejo.2020.104777)

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Abstract

For the information transmission and application field of the bus, it is necessary to design a bus transceiver with high reliability and hot-swap ability. In order to achieve this requirement, this paper proposes a novel transceiver circuit with hot-swap structure. This structure effectively improves the transistor utilization efficiency and reduces the chip area on the premise of achieving the hot-swap performance. Furthermore, the traditional Schottky diode is avoided, and the hot-swap circuit proposed in this work can be implemented in any CMOS process. A prototype was fabricated in CSMC 0.5 μm CMOS technology, and the measurement results match well with the simulation results show that the chip meets the design requirements.

Item Type:Articles
Additional Information:The work of Hua Fan was supported by the National Natural Science Foun- dation of China (NSFC) under Grant 61771111, supported by Sichuan Provincial Science and Technology Important Projects under Grant 19ZDYF2863, as well as supported by China Postdoctoral Science Foundation under grant 2017M612940 & 2019T120834 and Special Foundation of Sichuan Provincial Postdoctoral Science Foundation. The work of Quanyuan Feng was supported by the National Natural Sci- ence Foundation of China (NSFC) under Grant 61531016, supported by Sichuan Provincial Science and Technology Important Projects under Grant 2018GZ0139, 2018ZDZX0148 and 2018GZDZX0001. The work of Hadi Heidari was supported by the Royal Society under grant RSG/R1/180269 and EP/R511705/1 from the EPSRC, United Kingdom.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Heidari, Dr Hadi
Authors: Lia, D., Lia, Z., Li, W., Fan, H., Wang, C., Che, H., Zeng, X., Feng, Q., and Heidari, H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microelectronics Journal
Publisher:Elsevier
ISSN:0026-2692
ISSN (Online):1879-2391
Published Online:13 April 2020
Copyright Holders:Copyright © 2020 Elsevier Ltd.
First Published:First published in Microelectronics Journal 100: 104777
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
302877Magnetic Diagnostics Setup for Lab-on-Chip ApplicationHadi HeidariThe Royal Society (ROYSOC)RSG\R1|180269ENG - Electronics & Nanoscale Engineering
304896EPSRC-IAA: Early Stage Commercialisation of a PET Imaging Agent for the Detection of Cardiovascular Disease and CancerAndrew SutherlandEngineering and Physical Sciences Research Council (EPSRC)EP/R511705/1Chemistry