Measurements of Permittivity and Dielectric Loss Tangent of High Resistivity Float Zone Silicon at Microwave Frequencies

Krupka, J., Breeze, J., Alford, N. M., Centeno, A. E. , Jensen, L. and Claussen, T. (2006) Measurements of Permittivity and Dielectric Loss Tangent of High Resistivity Float Zone Silicon at Microwave Frequencies. In: 2006 International Conference on Microwaves, Radar & Wireless Communications, Krakow, Poland, 22-24 May 2006, ISBN 9788390666273 (doi: 10.1109/MIKON.2006.4345377)

Abstract

Real part of permittivity and the dielectric loss tangent of float zone high resistivity Silicon were measured at microwave frequencies at temperatures from 10 K up to 380 K employing dielectric resonator technique. The real part of permittivity proved to be frequency independent and the decrease in dielectric loss tangent versus frequency proved to be not entirely proportional to the inverse of frequency. At temperatures below 25 K where all free carriers are frozen-out loss tangents values the order of 10 -4 were measured.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Centeno, Dr Anthony
• Authors: Krupka, J., Breeze, J., Alford, N. M., Centeno, A. E., Jensen, L., and Claussen, T.
• College/School: College of Science and Engineering > School of Engineering > Systems Power and Energy
• ISBN: 9788390666273
• Published Online: 15 October 2007