Monolayer MoSe₂-based tunneling field effect transistor for ultrasensitive strain sensing

Dubey, P. K., Yogeswaran, N., Liu, F., Vilouras, A. , Kaushik, B. K. and Dahiya, R. (2020) Monolayer MoSe₂-based tunneling field effect transistor for ultrasensitive strain sensing. IEEE Transactions on Electron Devices, 67(5), pp. 2140-2146. (doi: 10.1109/TED.2020.2982732)

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Abstract

This article presents a detailed investigation of the impact of mechanical strain on transition metal dichalcogenide (TMD) material-based tunneling field-effect transistor (TFET). First, the impact of mechanical strain on material parameters of MoSe₂ is calculated using the first principle of density functional theory (DFT) under meta-generalized gradient approximation (MGGA). The device performance of the TMD TFET has been studied by solving the self-consistent 3-D Poisson and Schrodinger equations in nonequilibrium Green's function (NEGF) framework. The results demonstrate that both Ion and Ioff increase with uniaxial tensile strain, however the change in Ion/Ioff ratio remains small. This strain-dependent performance change in TMD TFET has been utilized to design an ultrasensitive strain sensor. The device shows a sensitivity (ΔIDS/IDS) of 3.61 for a strain of 2%. Due to the high sensitivity to the strain, these results show the potential of using MoSe₂ TFET as a flexible strain sensor. Furthermore, the strained TFET is analyzed for backend circuit performance. It is observed that the speed and energy efficiency of ten-stage inverter chain based on controlled strain improve substantially in comparison to unstrained TFETs.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Dubey, Prabhat Kumar and Vilouras, Anastasios and Yogeswaran, Mr Nivasan and Dahiya, Professor Ravinder and Liu, Fengyuan
Authors: Dubey, P. K., Yogeswaran, N., Liu, F., Vilouras, A., Kaushik, B. K., and Dahiya, R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:IEEE
ISSN:0018-9383
ISSN (Online):1557-9646
Published Online:14 April 2020
Copyright Holders:Copyright © 2020 IEEE
First Published:First published in IEEE Transactions on Electron Devices 67(5): 2140-2146
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
301728Engineering Fellowships for Growth: Printed Tactile SKINRavinder DahiyaEngineering and Physical Sciences Research Council (EPSRC)EP/R029644/1ENG - Electronics & Nanoscale Engineering
301327`Hetero-print: A holistic approach to transfer-printing for heterogeneous integration in manufacturingPeter SkabaraEngineering and Physical Sciences Research Council (EPSRC)EP/R03480X/1ENG - Electronics & Nanoscale Engineering