Dubey, P. K., Yogeswaran, N., Liu, F. , Vilouras, A. , Kaushik, B. K. and Dahiya, R. (2020) Monolayer MoSe₂-based tunneling field effect transistor for ultrasensitive strain sensing. IEEE Transactions on Electron Devices, 67(5), pp. 2140-2146. (doi: 10.1109/TED.2020.2982732)
|
Text
212462.pdf - Accepted Version 2MB |
Abstract
This article presents a detailed investigation of the impact of mechanical strain on transition metal dichalcogenide (TMD) material-based tunneling field-effect transistor (TFET). First, the impact of mechanical strain on material parameters of MoSe₂ is calculated using the first principle of density functional theory (DFT) under meta-generalized gradient approximation (MGGA). The device performance of the TMD TFET has been studied by solving the self-consistent 3-D Poisson and Schrodinger equations in nonequilibrium Green's function (NEGF) framework. The results demonstrate that both Ion and Ioff increase with uniaxial tensile strain, however the change in Ion/Ioff ratio remains small. This strain-dependent performance change in TMD TFET has been utilized to design an ultrasensitive strain sensor. The device shows a sensitivity (ΔIDS/IDS) of 3.61 for a strain of 2%. Due to the high sensitivity to the strain, these results show the potential of using MoSe₂ TFET as a flexible strain sensor. Furthermore, the strained TFET is analyzed for backend circuit performance. It is observed that the speed and energy efficiency of ten-stage inverter chain based on controlled strain improve substantially in comparison to unstrained TFETs.
Item Type: | Articles |
---|---|
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Vilouras, Anastasios and Liu, Mr Fengyuan and Yogeswaran, Mr Nivasan and Dahiya, Professor Ravinder and Dubey, Prabhat Kumar |
Authors: | Dubey, P. K., Yogeswaran, N., Liu, F., Vilouras, A., Kaushik, B. K., and Dahiya, R. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Transactions on Electron Devices |
Publisher: | IEEE |
ISSN: | 0018-9383 |
ISSN (Online): | 1557-9646 |
Published Online: | 14 April 2020 |
Copyright Holders: | Copyright © 2020 IEEE |
First Published: | First published in IEEE Transactions on Electron Devices 67(5): 2140-2146 |
Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
University Staff: Request a correction | Enlighten Editors: Update this record