Smith, M. D. et al. (2020) GaN-on-diamond technology platform: bonding-free membrane manufacturing process. AIP Advances, 10(3), 035306. (doi: 10.1063/1.5129229)
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Abstract
GaN-on-diamond samples were demonstrated using a membrane-based technology. This was achieved by selective area Si substrate removal of areas of up to 1 cm × 1 cm from a GaN-on-Si wafer, followed by direct growth of a polycrystalline diamond using microwave plasma chemical vapor deposition on etch exposed N-polar AlN epitaxial nucleation layers. Atomic force microscopy and transmission electron microscopy were used to confirm the formation of high quality, void-free AlN/diamond interfaces. The bond between the III-nitride layers and the diamond was validated by strain measurements of the GaN buffer layer. Demonstration of this technology platform is an important step forward for the creation of next generation high power electronic devices.
Item Type: | Articles |
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Additional Information: | The authors would like to acknowledge financial support from the Engineering and Physical Sciences Research Council (EPSRC) under the program Grant GaN-DaME (Grant No. EP/P00945X/1). |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Fu, Mr Yen-Chun and Smith, Dr Matthew |
Authors: | Smith, M. D., Cuenca, J. A., Field, D. E., Fu, Y.-c., Yuan, C., Massabuau, F., Mandal, S., Pomeroy, J. W., Oliver, R. A., Uren, M. J., Elgaid, K., Williams, O. A., Thayne, I., and Kuball, M. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | AIP Advances |
Publisher: | AIP Publishing |
ISSN: | 2158-3226 |
ISSN (Online): | 2158-3226 |
Published Online: | 03 March 2020 |
Copyright Holders: | Copyright © 2020 The Authors |
First Published: | First published in AIP Advances 10(3): 035306 |
Publisher Policy: | Reproduced under a Creative Commons License |
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