GaN-on-diamond technology platform: bonding-free membrane manufacturing process

Smith, M. D. et al. (2020) GaN-on-diamond technology platform: bonding-free membrane manufacturing process. AIP Advances, 10(3), 035306. (doi: 10.1063/1.5129229)

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Abstract

GaN-on-diamond samples were demonstrated using a membrane-based technology. This was achieved by selective area Si substrate removal of areas of up to 1 cm × 1 cm from a GaN-on-Si wafer, followed by direct growth of a polycrystalline diamond using microwave plasma chemical vapor deposition on etch exposed N-polar AlN epitaxial nucleation layers. Atomic force microscopy and transmission electron microscopy were used to confirm the formation of high quality, void-free AlN/diamond interfaces. The bond between the III-nitride layers and the diamond was validated by strain measurements of the GaN buffer layer. Demonstration of this technology platform is an important step forward for the creation of next generation high power electronic devices.

Item Type:Articles
Additional Information:The authors would like to acknowledge financial support from the Engineering and Physical Sciences Research Council (EPSRC) under the program Grant GaN-DaME (Grant No. EP/P00945X/1).
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Prof Iain and Fu, Mr Yen-Chun and Smith, Dr Matthew
Authors: Smith, M. D., Cuenca, J. A., Field, D. E., Fu, Y.-c., Yuan, C., Massabuau, F., Mandal, S., Pomeroy, J. W., Oliver, R. A., Uren, M. J., Elgaid, K., Williams, O. A., Thayne, I., and Kuball, M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:AIP Advances
Publisher:AIP Publishing
ISSN:2158-3226
ISSN (Online):2158-3226
Published Online:03 March 2020
Copyright Holders:Copyright © 2020 The Authors
First Published:First published in AIP Advances 10(3): 035306
Publisher Policy:Reproduced under a Creative Commons License

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