Terahertz absorption-saturation and emission from electron-doped germanium quantum wells

Ciano, C. et al. (2020) Terahertz absorption-saturation and emission from electron-doped germanium quantum wells. Optics Express, 28(5), pp. 7245-7258. (doi: 10.1364/OE.381471)

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We study radiative relaxation at terahertz frequencies in n-type Ge/SiGe quantum wells, optically pumped with a terahertz free electron laser. Two wells coupled through a tunneling barrier are designed to operate as a three-level laser system with non-equilibrium population generated by optical pumping around the 1→3 intersubband transition at 10 THz. The non-equilibrium subband population dynamics are studied by absorption-saturation measurements and compared to a numerical model. In the emission spectroscopy experiment, we observed a photoluminescence peak at 4 THz, which can be attributed to the 3→2 intersubband transition with possible contribution from the 2→1 intersubband transition. These results represent a step towards silicon-based integrated terahertz emitters.

Item Type:Articles
Additional Information:Funding: Horizon 2020 Framework Programme (730872, 766719).
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Ciano, C., Virgilio, M., Bagolini, L., Baldassarre, L., Pashkin, A., Helm, M., Montanari, M., Persichetti, L., Di Gaspare, L., Capellini, G., Paul, D. J., Scalari, G., Faist, J., De Seta, M., and Ortolani, M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Optics Express
Publisher:Optical Society of America
ISSN (Online):1094-4087
Published Online:26 February 2020
Copyright Holders:Copyright © 2020 Optical Society of America
First Published:First published in Optics Express 28(5):7245-7258
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
301516Far-infrared Lasers Assembled using SiliconDouglas PaulEuropean Commission (EC)766719ENG - Electronics & Nanoscale Engineering