Quantum enhancement of a S/D tunneling model in a 2D MS-EMC nanodevice simulator: NEGF comparison and impact of effective mass variation

Medina-Bailon, C., Carrillo-Nunez, H., Lee, J., Sampedro, C., Padilla, J. L., Donetti, L., Georgiev, V. , Gamiz, F. and Asenov, A. (2020) Quantum enhancement of a S/D tunneling model in a 2D MS-EMC nanodevice simulator: NEGF comparison and impact of effective mass variation. Micromachines, 11(2), 204. (doi: 10.3390/mi11020204)

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Abstract

As complementary metal-oxide-semiconductor (CMOS) transistors approach the nanometer scale, it has become mandatory to incorporate suitable quantum formalism into electron transport simulators. In this work, we present the quantum enhancement of a 2D Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator, which includes a novel module for the direct Source-to-Drain tunneling (S/D tunneling), and its verification in the simulation of Double-Gate Silicon-On-Insulator (DGSOI) transistors and FinFETs. Compared to ballistic Non-Equilibrium Green’s Function (NEGF) simulations, our results show accurate I D vs. V GS and subthreshold characteristics for both devices. Besides, we investigate the impact of the effective masses extracted Density Functional Theory (DFT) simulations, showing that they are the key of not only the general thermionic emission behavior of simulated devices, but also the electron probability of experiencing tunneling phenomena.

Item Type:Articles
Additional Information:(This article belongs to the Special Issue Miniaturized Transistors, Volume II).
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Carrillo-Nunez, Dr Hamilton and Lee, Jaehyun and Georgiev, Dr Vihar and Asenov, Professor Asen and Medina Bailon, Miss Cristina
Creator Roles:
Medina Bailon, C.Writing – original draft, Methodology
Carrillo-Nunez, H.Writing – original draft, Methodology
Lee, J.Methodology
Georgiev, V.Writing – review and editing, Supervision
Authors: Medina-Bailon, C., Carrillo-Nunez, H., Lee, J., Sampedro, C., Padilla, J. L., Donetti, L., Georgiev, V., Gamiz, F., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Micromachines
Publisher:MDPI
ISSN:2072-666X
ISSN (Online):2072-666X
Copyright Holders:Copyright © 2020 The Authors
First Published:First published in Micromachines 11(2):204
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
302377Quantum Simulator for Entangled Electronics (QSEE)Vihar GeorgievEngineering and Physical Sciences Research Council (EPSRC)EP/S001131/1ENG - Electronics & Nanoscale Engineering
173715Quantum Electronics Device Modelling (QUANTDEVMOD)Vihar GeorgievEngineering and Physical Sciences Research Council (EPSRC)EP/P009972/1ENG - Electronics & Nanoscale Engineering