Stallinga, P., Roy, V.A.L. , Xu, Z.-X., Xiang, H.-F. and Che, C.-M. (2008) Metal-insulator-metal transistors. Advanced Materials, 20(11), pp. 2120-2124. (doi: 10.1002/adma.200702525)
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Abstract
A metal–insulator–metal field‐effect transistor has been fabricated. The device performance was achieved by reducing the density of states by only partially covering the substrate, which increases the relative field effect. An infinite on–off ratio, no lower limit to device dimensions, a generally enhanced flexibility in design, and low production costs are all advantages of this device.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Vellaisamy, Professor Roy |
| Authors: | Stallinga, P., Roy, V.A.L., Xu, Z.-X., Xiang, H.-F., and Che, C.-M. |
| College/School: | College of Science and Engineering > School of Engineering |
| Journal Name: | Advanced Materials |
| Publisher: | Wiley |
| ISSN: | 0935-9648 |
| ISSN (Online): | 1521-4095 |
| Published Online: | 24 April 2008 |
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