Field-effect transistor fabricated with nickel(II) etioporphyrin-I micrometer-sized crystals

Xu, Z.-X., Xiang, H.-F., Roy, V.A.L. , Chui, S. S.-Y., Che, C.-M. and Lai, P.T. (2008) Field-effect transistor fabricated with nickel(II) etioporphyrin-I micrometer-sized crystals. Applied Physics Letters, 93(22), 223305. (doi: 10.1063/1.3040319)

Abstract

We fabricated a field-effect transistor using micrometer-sized crystals (10–40 μm) of nickel(II) etioporphyrin-I NiOX as active material. Microwires and micrometer-sized crystals of NiOX were obtained by heating NiOX thin film under high vacuum. Through this method, traps due to solvent molecules could be avoided. The transistor fabricated with these micrometer-sized crystals has a hole mobility of 0.15±0.03 cm2 V−1 s−1, which is two orders of magnitude higher than that obtained with the thin film structure (1.1×10−3 cm2 V−1 s−1).

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Vellaisamy, Professor Roy
• Authors: Xu, Z.-X., Xiang, H.-F., Roy, V.A.L., Chui, S. S.-Y., Che, C.-M., and Lai, P.T.
• College/School: College of Science and Engineering > School of Engineering
• Journal Name: Applied Physics Letters
• Publisher: AIP Publishing
• ISSN: 0003-6951
• ISSN (Online): 1077-3118
• Published Online: 04 December 2008