Ambipolar charge transport and electroluminescence properties of ZnO nanorods

Wong, C.-Y., Lai, L.-M., Leung, S.-L., Roy, V.A.L. and Pin, E. Y.-B. (2008) Ambipolar charge transport and electroluminescence properties of ZnO nanorods. Applied Physics Letters, 93(2), 023502. (doi: 10.1063/1.2957671)

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Abstract

Hexagonal ZnO nanorod arrays have been prepared by a simple low-temperature ZnO-nanocrystal-assisted hydrothermal method. The photoluminescence spectrum of the ZnO nanorods features a weak band-edge emission at λmax∼3.3eV and a strong broad yellow emission at λmax∼2.17eV. Unlike the conventional reported n-type semiconducting property, our ZnO nanorods exhibit ambipolar charge transporting behavior. Using bottom contact field-effect transistor structure, the ZnO nanorods exhibit electron and hole mobilities up to 3.2 and 2.1cm2V−1s−1, respectively. Electroluminescence in the visible region from the nanorod-based device has also been demonstrated.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Vellaisamy, Professor Roy
Authors: Wong, C.-Y., Lai, L.-M., Leung, S.-L., Roy, V.A.L., and Pin, E. Y.-B.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN:0003-6951
ISSN (Online):1077-3118

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