Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: Synthesis, characterization and properties

Cao, Y.L. et al. (2009) Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: Synthesis, characterization and properties. Nanotechnology, 20(45), 455702. (doi:10.1088/0957-4484/20/45/455702)

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Abstract

Coaxial nanocables with a single-crystalline zinc telluride (ZnTe) nanowire core and an amorphous silicon oxide (SiOx) shell have been synthesized via a simple one-step chemical vapor deposition (CVD) method on gold-decorated silicon substrates. The single-crystal ZnTe nanowire core is in zinc-blende structure along the [111] direction, while the uniform SiOx shell fully covers the core with no observable pin-hole or crack. Formation mechanisms of the ZnTe–SiOx nanocables are discussed. The ZnTe nanowire core shows p-type electrical properties while the SiOx shell acts as an effective insulating layer. The ZnTe–SiOx nanocables may have potential applications in nanoscale devices, such as p-type FETs and nanosensors.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Vellaisamy, Professor Roy
Authors: Cao, Y.L., Tang, Y.B., Liu, Y., Liu, Z.T., Luo, L.B., He, Z.B., Jie, J.S., Vellaisamy, R., Zhang, W.J., Lee, C.S., and Lee, S.T.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Nanotechnology
Publisher:IOP Publishing
ISSN:0957-4484
ISSN (Online):1361-6528
Published Online:16 October 2009

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