Controllable threshold voltage shifts of polymer transistors and inverters by utilizing gold nanoparticles

Han, S.-T., Zhou, Y., Xu, Z.-X. and Roy, V.A.L. (2012) Controllable threshold voltage shifts of polymer transistors and inverters by utilizing gold nanoparticles. Applied Physics Letters, 101(3), 033306. (doi: 10.1063/1.4737422)

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Abstract

We have demonstrated controllable threshold voltage (Vth) shifts of gold nanoparticles (Au NPs)/poly (3-hexylthiophene) (P3HT) based composite transistors that are fabricated through a low temperature facile technique. By varying the doping concentration of gold nanoparticles in P3HT matrix, Vth has been tuned from 12 V to 27 V without device degradation. Using this technique, the switching voltages of unipolar inverters have also been systematically tuned. Efficient hole conduction and a variation in P3HT crystallinity was observed due to different concentrations of Au NPs which eventually shift the threshold voltage of the devices in a controlled manner.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Vellaisamy, Professor Roy
Authors: Han, S.-T., Zhou, Y., Xu, Z.-X., and Roy, V.A.L.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN:0003-6951
ISSN (Online):1077-3118
Published Online:17 July 2012

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