Structural, electrical, and optical properties of Zn1-xSn xO thin films deposited by reactive co-sputtering

Ye, F., Zhong, X., Cai, X.-M., Huang, L.-B., Roy, V.A.L. , Jing, S.-Y., Zhang, D.-P., Fan, P., Luo, J.-T. and Tian, X.-Q. (2013) Structural, electrical, and optical properties of Zn1-xSn xO thin films deposited by reactive co-sputtering. Physica Status Solidi A: Applications and Materials Science, 210(11), pp. 2404-2408. (doi: 10.1002/pssa.201329266)

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Abstract

Zn1−xSnxO thin films were deposited on K9 glass and Si substrates by co‐sputtering Zn and Sn targets under atmospheres of Ar and O2. The samples were then characterized with X‐ray diffraction (XRD), Raman, energy‐dispersive X‐ray spectroscopy (EDX), Seebeck effect, four‐probe instrument, and UV/VIS spectrophotometry. XRD and Raman show that all the samples are hexagonal and Sn doping increases the stress greatly. EDX demonstrates that the atomic ratio of Sn to Sn plus Zn is 0.04–0.07. All the samples are n‐type. The resistivity of Zn1−xSnxO is much smaller than that of undoped ZnO deposited under the same conditions. The optical bandgap of Zn1−xSnxO is also reduced compared with that of ZnO deposited under the same conditions.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Vellaisamy, Professor Roy
Authors: Ye, F., Zhong, X., Cai, X.-M., Huang, L.-B., Roy, V.A.L., Jing, S.-Y., Zhang, D.-P., Fan, P., Luo, J.-T., and Tian, X.-Q.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Physica Status Solidi A: Applications and Materials Science
Publisher:Wiley
ISSN:1862-6300
ISSN (Online):1862-6319
Published Online:13 August 2013

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