Solution processed molecular floating gate for flexible flash memories

Zhou, Y., Han, S.-T., Yan, Y., Huang, L.-B., Zhou, L., Huang, J. and Roy, V.A.L. (2013) Solution processed molecular floating gate for flexible flash memories. Scientific Reports, 3, 3093. (doi: 10.1038/srep03093) (PMID:24172758) (PMCID:PMC3813938)

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Abstract

Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Vellaisamy, Professor Roy
Authors: Zhou, Y., Han, S.-T., Yan, Y., Huang, L.-B., Zhou, L., Huang, J., and Roy, V.A.L.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Scientific Reports
Publisher:Nature Research
ISSN:2045-2322
ISSN (Online):2045-2322
Copyright Holders:Copyright © 2013 The Authors
First Published:First published in Scientific Reports 3: 3093
Publisher Policy:Reproduced under a Creative Commons License

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