Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism

Zhou, Y., Han, S.-T., Sona, P. and Roy, V.A.L. (2013) Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism. Scientific Reports, 3, 2319. (doi: 10.1038/srep02319) (PMID:23900459) (PMCID:PMC3728587)

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Abstract

The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both electrons and holes efficiently. Here, we achieved large memory window and distinct multilevel data storage by utilizing the phenomena of ambipolar charge trapping mechanism. As fabricated flexible memory devices display five well-defined data levels with good endurance and retention properties showing potential application in printed electronics.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Vellaisamy, Professor Roy
Authors: Zhou, Y., Han, S.-T., Sona, P., and Roy, V.A.L.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Scientific Reports
Publisher:Nature Research
ISSN:2045-2322
ISSN (Online):2045-2322
Copyright Holders:Copyright © 2013 The Authors
First Published:First published in Scientific Reports 3:2319
Publisher Policy:Reproduced under a Creative Commons licence
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