Han, S.-T., Zhou, Y., Yang, Q.D., Zhou, L., Huang, L.-B., Yan, Y., Lee, C.-S. and Roy, V.A.L. (2014) Energy-band engineering for tunable memory characteristics through controlled doping of reduced graphene oxide. ACS Nano, 8(2), pp. 1923-1931. (doi: 10.1021/nn406505t) (PMID:24472000)
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Abstract
Tunable memory characteristics are used in multioperational mode circuits where memory cells with various functionalities are needed in one combined device. It is always a challenge to obtain control over threshold voltage for multimode operation. On this regard, we use a strategy of shifting the work function of reduced graphene oxide (rGO) in a controlled manner through doping gold chloride (AuCl3) and obtained a gradient increase of rGO work function. By inserting doped rGO as floating gate, a controlled threshold voltage (Vth) shift has been achieved in both p- and n-type low voltage flexible memory devices with large memory window (up to 4 times for p-type and 8 times for n-type memory devices) in comparison with pristine rGO floating gate memory devices. By proper energy band engineering, we demonstrated a flexible floating gate memory device with larger memory window and controlled threshold voltage shifts.
Item Type: | Articles |
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Additional Information: | This work was financially supported by Shenzhen Municipality project no. JCYJ20120618115445056, City University of Hong Kong project no. 7002853 and the Research Grants Council of the Hong Kong Special Administrative Region (Project No.T23-713/11). |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Vellaisamy, Professor Roy |
Authors: | Han, S.-T., Zhou, Y., Yang, Q.D., Zhou, L., Huang, L.-B., Yan, Y., Lee, C.-S., and Roy, V.A.L. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | ACS Nano |
Publisher: | American Chemical Society |
ISSN: | 1936-0851 |
ISSN (Online): | 1936-086X |
Published Online: | 30 January 2014 |
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