Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids

Zhou, Y., Han, S.-T., Sonar, P., Ma, X., Chen, J., Zheng, Z. and Roy, V.A.L. (2015) Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids. Scientific Reports, 5, 9446. (doi: 10.1038/srep09446) (PMID:25801827) (PMCID:PMC4371103)

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Abstract

The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. This hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Vellaisamy, Professor Roy
Authors: Zhou, Y., Han, S.-T., Sonar, P., Ma, X., Chen, J., Zheng, Z., and Roy, V.A.L.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Scientific Reports
Publisher:Nature Publishing Group
ISSN:2045-2322
ISSN (Online):2045-2322
Copyright Holders:Copyright © 2015 The Authors
First Published:First published in Scientific Reports 5:9446
Publisher Policy:Reproduced under a Creative Commons licence
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