Photo-reactive charge trapping memory based on lanthanide complex

Zhuang, J. et al. (2015) Photo-reactive charge trapping memory based on lanthanide complex. Scientific Reports, 5, 14998. (doi: 10.1038/srep14998) (PMID:26449199) (PMCID:PMC4598868)

[img]
Preview
Text
206758.pdf - Published Version
Available under License Creative Commons Attribution.

2MB

Abstract

Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lanthanide complex Eu(tta)<sub>3</sub> ppta (Eu(tta)<sub>3</sub> = Europium(III) thenoyltrifluoroacetonate, ppta = 2-phenyl-4,6-bis(pyrazol-1-yl)-1,3,5-triazine), in which the photo-induced charges can be successfully trapped and detrapped. The luminescent complex emits intense red emission upon ultraviolet (UV) light excitation and serves as a trapping element of holes injected from the pentacene semiconductor layer. Memory window can be significantly enlarged by light-assisted programming and erasing procedures, during which the photo-induced excitons in the semiconductor layer are separated by voltage bias. The enhancement of memory window is attributed to the increasing number of photo-induced excitons by the UV light. The charges are stored in this luminescent complex for at least 10<sup>4</sup>s after withdrawing voltage bias. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Vellaisamy, Professor Roy
Authors: Zhuang, J., Lo, W.-S., Zhou, L., Sun, Q.-J., Chan, C.-F., Zhou, Y., Han, S.-T., Yan, Y., Wong, W.-T., Wong, K.-L., and Roy, V.A.L.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Scientific Reports
Publisher:Nature Research
ISSN:2045-2322
ISSN (Online):2045-2322
Copyright Holders:Copyright © 2015 The Authors
First Published:First published in Scientific Reports 5:14998
Publisher Policy:Reproduced under a Creative Commons licence
Related URLs:

University Staff: Request a correction | Enlighten Editors: Update this record