Self-aligned, full solution process polymer field-effect transistor on flexible substrates

Yan, Y., Huang, L.-B., Zhou, Y., Han, S.-T., Zhou, L., Zhuang, J., Xu, Z.-X. and Roy, V.A.L. (2015) Self-aligned, full solution process polymer field-effect transistor on flexible substrates. Scientific Reports, 5, 15770. (doi: 10.1038/srep15770) (PMID:26497412) (PMCID:PMC4620563)

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Abstract

Conventional techniques to form selective surface energy regions on rigid inorganic substrates are not suitable for polymer interfaces due to sensitive and soft limitation of intrinsic polymer properties. Therefore, there is a strong demand for finding a novel and compatible method for polymeric surface energy modification. Here, by employing the confined photo-catalytic oxidation method, we successfully demonstrate full polymer filed-effect transistors fabricated through four-step spin-coating process on a flexible polymer substrate. The approach shows negligible etching effect on polymeric film. Even more, the insulating property of polymeric dielectric is not affected by the method, which is vital for polymer electronics. Finally, the self-aligned full polymer field-effect transistors on the flexible polymeric substrate are fabricated, showing good electrical properties and mechanical flexibility under bending tests.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Vellaisamy, Professor Roy
Authors: Yan, Y., Huang, L.-B., Zhou, Y., Han, S.-T., Zhou, L., Zhuang, J., Xu, Z.-X., and Roy, V.A.L.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Scientific Reports
Publisher:Nature Research
ISSN:2045-2322
ISSN (Online):2045-2322
Copyright Holders:Copyright © 2015 The Authors
First Published:First published in Scientific Reports 5:15770
Publisher Policy:Reproduced under a Creative Commons licence
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