Han, S.-T., Zhou, Y., Chen, B., Zhou, L., Yan, Y., Zhang, H. and Roy, V.A.L. (2015) Two-dimensional molybdenum disulphide nanosheet-covered metal nanoparticle array as a floating gate in multi-functional flash memories. Nanoscale, 7(41), pp. 17496-17503. (doi: 10.1039/c5nr05054e) (PMID:26445097)
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Abstract
Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs–molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs–MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal NPs–MoS2 floating gate flash memories were further proven to be multi-bit memory storage devices possessing a 3-bit storage capability and a good retention capability up to 104 s. We anticipate that these findings would provide scientific insight for the development of novel memory devices utilizing an atomically thin two-dimensional lattice structure.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Vellaisamy, Professor Roy |
| Authors: | Han, S.-T., Zhou, Y., Chen, B., Zhou, L., Yan, Y., Zhang, H., and Roy, V.A.L. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Nanoscale |
| Publisher: | Royal Society of Chemistry |
| ISSN: | 2040-3364 |
| ISSN (Online): | 2040-3372 |
| Published Online: | 25 September 2015 |
| Related URLs: |
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