Shiliang, J., Qi-Jun, S., Venkatesh, S., Yan, Y., Zhou, Y., Zhuang, J., Zhou, L., Han, S., Xu, Z.-X. and Roy, V.A.L. (2016) Low-voltage Extended Gate Organic Thin Film Transistors for Ion Sensing Based on Semi-conducting Polymer Electrodes. In: SPIE OPTO 2016, San Francisco, CA, USA, 13-18 Feb 2016, (doi: 10.1117/12.2218397)
Full text not currently available from Enlighten.
Abstract
We report a low-voltage organic field-effect transistor consisting of an extended gate sensory area to detect various ions in a solution. The device distinguishes various ions by the shift in threshold voltage and is sensitive to multiple ions with various concentrations. X-ray photoelectron spectroscopy measurements and the resistance changes at the sensor area prove that the ions are doped into the sensitive film at the sensor area. Because of the effect of doping, the conductivity of the semiconductor polymer film changes thus causing a threshold voltage shift.
Item Type: | Conference Proceedings |
---|---|
Additional Information: | Proceedings Volume 9749, Oxide-based Materials and Devices VII; 974912 (2016). |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Vellaisamy, Professor Roy |
Authors: | Shiliang, J., Qi-Jun, S., Venkatesh, S., Yan, Y., Zhou, Y., Zhuang, J., Zhou, L., Han, S., Xu, Z.-X., and Roy, V.A.L. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Oxide-based Materials and Devices VII |
University Staff: Request a correction | Enlighten Editors: Update this record