Localized surface plasmon resonance-mediated charge trapping/ detrapping for core-shell nanorod-based optical memory cells

Zhou, L., Han, S.-T., Shu, S., Zhuang, J., Yan,, Y., Sun, Q.-J., Zhou, Y. and Roy, V. A. L. (2017) Localized surface plasmon resonance-mediated charge trapping/ detrapping for core-shell nanorod-based optical memory cells. ACS Applied Materials and Interfaces, 9(39), pp. 34101-34110. (doi: 10.1021/acsami.7b07486) (PMID:28891295)

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Abstract

For following the trend of miniaturization as per Moore’s law, increasing efforts have been made to develop single devices with versatile functionalities for Internet of Things (IoT). In this work, organic optical memory devices with excellent dual optoelectronic functionality including light sensing and data storage have been proposed. The Au@Ag core–shell nanorods (NRs)-based memory device exhibits large memory window up to 19.7 V due to the well-controlled morphology of Au@Ag NRs with optimum size and concentration. Furthermore, since the extinction intensity of Au@Ag NRs gradually enhance with the increase in Ag shell thickness, the phototunable behaviors of memory device were systematically studied by varying the thickness of Ag shell. Multilevel data storage can be achieved with the light assistant. Finally, the simulation results demonstrate that the phototunable memory property is originated from the multimode localized surface plasmon resonance (LSPR) of Au@Ag NRs, which is in consistent with the experimental results. The Au@Ag core–shell NRs-based memories may open up a new strategy toward developing high-performance optoelectronic devices.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Vellaisamy, Professor Roy
Authors: Zhou, L., Han, S.-T., Shu, S., Zhuang, J., Yan,, Y., Sun, Q.-J., Zhou, Y., and Roy, V. A. L.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:ACS Applied Materials and Interfaces
Publisher:American Chemical Society
ISSN:1944-8244
ISSN (Online):1944-8252
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