Tuning the photoluminescence, conduction mechanism and scattering mechanism of ZnSnN2

Cai, X.-M., Wang, B., Ye, F., Vaithinathan, K., Zeng, J.-J., Zhang, D.-P., Fan, P. and Roy, V.A.L. (2019) Tuning the photoluminescence, conduction mechanism and scattering mechanism of ZnSnN2. Journal of Alloys and Compounds, 779, pp. 237-243. (doi: 10.1016/j.jallcom.2018.11.239)

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Abstract

The high electron concentration and low mobility of ZnSnN2 hinder its potential applications in photocatalytic and optoelectronic devices. To reveal the mechanism, herein, ZnSnN2 thin films were prepared under different sputtering pressure. The results show that impurity band conduction, an electron density of above 1020cm−3 and a mobility of 2 cm2 V−1 s−1 dominated by variable-range hopping are observed in samples prepared at lower sputtering pressure, due to the unintentional incorporation of substitutional oxygen which is from residual vapour and which substitutes nitrogen, while conduction band conduction, an electron density of 1019 cm−3, a mobility of 24 cm2 V−1 s−1 limited by ionized impurity scattering and self-compensation ratio as well as an interband direct recombination emission are found in samples prepared at higher sputtering pressure, due to the decrease in substitutional oxygen doping.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Vellaisamy, Professor Roy
Authors: Cai, X.-M., Wang, B., Ye, F., Vaithinathan, K., Zeng, J.-J., Zhang, D.-P., Fan, P., and Roy, V.A.L.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Alloys and Compounds
Publisher:Elsevier
ISSN:0925-8388
ISSN (Online):1873-4669
Published Online:20 November 2018
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