Printed high-k dielectric for flexible low-power extended gate field-effect transistor in sensing pressure

Sun, Q.-J., Li, T., Wu, W., Venkatesh, S., Zhao, X.-H., Xu, Z.-X. and Roy, V. A. L. (2019) Printed high-k dielectric for flexible low-power extended gate field-effect transistor in sensing pressure. ACS Applied Electronic Materials, 1(5), pp. 711-717. (doi: 10.1021/acsaelm.9b00081)

Full text not currently available from Enlighten.

Abstract

Recently, flexible organic field-effect transistor (OFET)-based pressure sensors have been attracting significant interest for promising applications in electronic skin (e-skin) and wearable healthcare monitoring systems. However, it is still challenging to achieve the low-power flexible OFET-based pressure sensors by a simple and cost-effective approach. Herein, high-k Al2O3 dielectrics on aluminum foil have been developed by a simple printing approach, and their applications in flexible low-power organic field-effect transistors (OFETs) and pressure sensor are presented. The high-k Al2O3 dielectric films prepared by our method are robust and large-area compatible, leading to a high areal capacitance and low leakage current density. Furthermore, the flexible OFET devices based on the printed Al2O3 dielectric film exhibit a field-effect mobility of 0.65 cm2/(V s), current on/off ratio up to 105, and good mechanical stability. Additionally, the OFET devices exhibit excellent uniformity, indicating the printed Al2O3 dielectric is a promising candidate to fabricate the OFETs on a large scale. The extended gate OFET-based pressure sensor achieves a high pressure sensitivity of 8 kPa–1 at an operation voltage as low as −2 V and a fast response time of <100 ms. On the merits of the high-k dielectric constant, low leakage current, and large-area compatibility, the printed Al2O3 prepared by our method will boost the development of the flexible low-power transistor-based pressure sensors for e-skin and heath monitoring applications.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Vellaisamy, Professor Roy
Authors: Sun, Q.-J., Li, T., Wu, W., Venkatesh, S., Zhao, X.-H., Xu, Z.-X., and Roy, V. A. L.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:ACS Applied Electronic Materials
Publisher:American Chemical Society
ISSN:2637-6113
ISSN (Online):2637-6113
Published Online:24 April 2019

University Staff: Request a correction | Enlighten Editors: Update this record