Dislocation-induced ultra-low lattice thermal conductivity in rare earth doped β-Zn4Sb3

Karthikeyan, V., Arava, C. M., Hlaing, M. Z., Chen, B., Chan, C. H., Lam, K.-H. and Roy, V. A.L. (2020) Dislocation-induced ultra-low lattice thermal conductivity in rare earth doped β-Zn4Sb3. Scripta Materialia, 174, pp. 95-101. (doi: 10.1016/j.scriptamat.2019.08.037)

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Abstract

Defect engineering in thermoelectric materials leads to the formation of exotic transport properties. Specifically, reduction in lattice thermal conductivity (кL) can be realized through scattering of low and high-frequency phonons by interfacial and point defects respectively. Herein we explore such phenomena by inducing dense dislocations through doping of rare earth (RE) impurities in β-(Zn1−xREx)4Sb3 [x = 0.3–0.5 at.%] as phonon scattering source of all frequencies. Lattice anharmonicity created results in an ultra-low кL of ~0.15 W/mK for β-(Zn0.997 Yb0.003)4Sb3. Vibrational properties and phonon scattering altered by the lattice anharmonicity are studied in detail through terahertz and infrared spectroscopies.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Vellaisamy, Professor Roy
Authors: Karthikeyan, V., Arava, C. M., Hlaing, M. Z., Chen, B., Chan, C. H., Lam, K.-H., and Roy, V. A.L.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Scripta Materialia
Publisher:Elsevier
ISSN:1359-6462
ISSN (Online):1872-8456
Published Online:05 September 2019
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