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2019-12-06T05:32:49-08:00Arbortext Advanced Print Publisher 9.0.114/W2014-08-08T22:38:40+05:30
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aip.orgtrue10.1063/1.48913472014-08-11Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”
10.1063/1.4891347http://dx.doi.org/10.1063/1.4891347
doi:10.1063/1.4891347Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”J. R. WhyteR. G. P. McQuaidC. M. AshcroftJ. F. EinsleC. CanaliasA. GruvermanJ. M. Greggcapacitorselectric domainsfocused ion beam technologymemristorsnucleationpotassium compounds
2014-08-11trueaip.org10.1063/1.4891347
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