Alimi, Y., Pusino, V. , Steer, M. J. and Cumming, D.R.S. (2020) InSb avalanche photodiodes on GaAs substrates for mid-infrared detection. IEEE Transactions on Electron Devices, 67(1), pp. 179-184. (doi: 10.1109/TED.2019.2956283)
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203872.pdf - Accepted Version 1MB |
Abstract
We present indium antimonide-based devices for mid-infrared (mid-IR) detection with enhanced sensitivity. InSb devices will be useful for many applications, such as gas sensing and imaging. InSb avalanche photodiodes (APDs) monolithically integrated with GaAs substrates were fabricated with diameters ranging from 90 to $200~\mu \text{m}$ and extensively characterized at temperatures ranging from 77 K to 300 K. At 120 K a zero-bias responsivity of 2 A/W was measured, corresponding to a quantum efficiency of 55%. An experimental gain value of 10 at a reverse bias of −3 V was obtained at 120 K, which to the best of our knowledge, is the highest ever reported for InSb APDs. These results pave the way for the development of a monolithically integrated mid-IR array with added gain and wavelength tunability.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Cumming, Professor David and Pusino, Dr Vincenzo and Steer, Dr Matthew and Alimi, Dr Yasaman |
| Authors: | Alimi, Y., Pusino, V., Steer, M. J., and Cumming, D.R.S. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Transactions on Electron Devices |
| Publisher: | IEEE |
| ISSN: | 0018-9383 |
| ISSN (Online): | 1557-9646 |
| Published Online: | 16 December 2019 |
| Copyright Holders: | Copyright © 2019 IEEE |
| First Published: | First published in IEEE Transactions on Electron Devices 67(1): 179-184 |
| Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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