Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: a simulation study

Karbalaei, M., Dideban, D. and Heidari, H. (2020) Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: a simulation study. Results in Physics, 16, 102823. (doi:10.1016/j.rinp.2019.102823)

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Abstract

In this paper, we consider the electrical performance of a circular cross section gate all around-field effect transistor (GAA-FET) in which gate dielectric coverage with high-k dielectric (HfO2) over the channel region has been varied. Our simulations show the fact that as high-k dielectric coverage over the channel increases, ION/IOFF ratio and transconductance over drain current (gm/ID) will be enhanced. Moreover, we investigate the impact of channel length scaling on these devices. The obtained results show that subthreshold slope (SS), drain induced barrier lowering (DIBL) and threshold voltage (VTH) roll-off will be reduced as a result of scaling. In this work TCAD simulator was concisely calibrated against experimental data of a GAA-FET from IBM. The Schrödinger equation is solved in the transverse direction and quantum mechanical confinement effects are taken into account.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Heidari, Dr Hadi
Authors: Karbalaei, M., Dideban, D., and Heidari, H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Results in Physics
Publisher:Elsevier
ISSN:2211-3797
ISSN (Online):2211-3797
Published Online:22 November 2019
Copyright Holders:Copyright © 2019 The Authors
First Published:First published in Results in Physics 16:102823
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
300137Impact Acceleration Account - University of Glasgow 2017Jonathan CooperEngineering and Physical Sciences Research Council (EPSRC)EP/R511705/1Research and Innovation Services