First principles study of the ambipolarity in a germanene nanoribbon tunneling field effect transistor

Samipour, A., Dideban, D. and Heidari, H. (2019) First principles study of the ambipolarity in a germanene nanoribbon tunneling field effect transistor. ECS Journal of Solid State Science and Technology, 8(12), M111-M117. (doi:10.1149/2.0021912jss)

[img]
Preview
Text
203631.pdf - Accepted Version

813kB

Abstract

In this article, the effects of hetero-dielectric gate material and gate-drain underlap on the ambipolar and ON-state current of a germanene nanoribbon (GeNR) tunneling field-effect transistors (TFETs) is examined. The simulations are performed using the combination of density functional theory (DFT) and non-equilibrium Green's function (NEGF) formalism. It was observed that using high-k dielectric gate material increases the ON-state current while the combination of hetero-dielectric gate material and gate-drain underlap suppresses the ambipolar current and improves the ON-state current. In addition, the effect of various hetero-junctions in the source region on the performance of GeNR-TFET was investigated. Due to the dependency between the width and energy bandgap in GeNR, utilizing a small bandgap in the source improves ON-state current and its ambipolar behavior.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Heidari, Dr Hadi
Authors: Samipour, A., Dideban, D., and Heidari, H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:ECS Journal of Solid State Science and Technology
Publisher:Electrochemical Society
ISSN:2162-8769
ISSN (Online):2162-8777
Copyright Holders:Copyright © 2019 The Electrochemical Society
First Published:First published in ECS Journal of Solid State Science and Technology 8(12):M111-M117
Publisher Policy:Reproduced in accordance with the publisher copyright policy

University Staff: Request a correction | Enlighten Editors: Update this record