Montanari, M. et al. (2019) High-Quality n-Type Ge/SiGe Multilayers for THz Quantum Cascade Lasers. In: 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, France, 1-5 September 2019, pp. 1-2. ISBN 9781538682869 (doi: 10.1109/IRMMW-THz.2019.8874294)
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Abstract
The exploitation of intersubband transitions in Ge/SiGe quantum cascade devices could pave the way towards the integration of THz light emitters into the silicon-based technology. Aiming at the realization of a Ge/SiGe Quantum Cascade Laser (QCL), we investigate optical and structural properties of n-type Ge/SiGe coupled quantum well systems. The samples have been investigated by means of X-ray diffraction, scanning transmission electron microscopy, atom probe tomography and Fourier Transform Infrared absorption spectroscopy to assess the growth capability with respect to QCL design requirements, carefully identified by means of modelling based on the non-equilibrium Green function formalism.
| Item Type: | Conference Proceedings |
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| Keywords: | Quantum cascade lasers, absorption, couplings, Germanium, tunneling, phonons, substrates |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas |
| Authors: | Montanari, M., Ciano, C., Persichetti, L., Di Gaspare, L., Virgilio, M., Capellini, G., Zoellner, M., Skibitzki, O., Stark, D., Scalari, G., Faist, J., Paul, D., Grange, T., Birner, S., Scuderi, M., Nicotra, G., Moutanabbir, O., Mukherjee, S., Baldassarre, L., Ortolani, M., and De Seta, M. |
| Subjects: | Q Science > QC Physics |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Research Group: | Semiconductor Devices |
| ISSN: | 2162-2027 |
| ISBN: | 9781538682869 |
| Copyright Holders: | Copyright © 2019 IEEE |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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