Si-based n-type THz Quantum Cascade Emitter

Stark, D. et al. (2019) Si-based n-type THz Quantum Cascade Emitter. In: 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, France, 1-5 September 2019, pp. 1-2. ISBN 9781538682869 (doi:10.1109/IRMMW-THz.2019.8874354)

202772.pdf - Accepted Version



Employing electronic transitions in the conduction band of semiconductor heterostructures paves a way to integrate a light source into silicon-based technology. To date all electroluminescence demonstrations of Si-based heterostructures have been p-type using hole-hole transitions. In the pathway of realizing an n-type Ge/SiGe terahertz quantum cascade laser, we present electroluminescence measurements of quantum cascade structures with top diffraction gratings. The devices for surface emission have been fabricated out of a 4-well quantum cascade laser design with 30 periods. An optical signal was observed with a maximum between 8-9 meV and full width at half maximum of roughly 4 meV.

Item Type:Conference Proceedings
Keywords:Quantum cascade lasers, electroluminescence, diffraction, diffraction gratings, laser transitions, Green's function methods, pulse measurements
Glasgow Author(s) Enlighten ID:Rew, Miss Kirsty and Paul, Professor Douglas
Authors: Stark, D., Persichetti, L., Montanari, M., Ciano, C., Dr Gaspare, L., De Seta, M., Zollner, M., Skibitzki, O., Capellini, G., Ortolani, M., Baldassare, L., Virgilio, M., Grange, T., Birner, S., Rew, K., Paul, D., Faist, J., and Scalari, G.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Copyright Holders:Copyright © 2019 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
301516Far-infrared Lasers Assembled using SiliconDouglas PaulEuropean Commission (EC)766719ENG - Electronics & Nanoscale Engineering