Electron-doped SiGe Quantum Well Terahertz Emitters pumped by FEL pulses

Ciano, C. et al. (2019) Electron-doped SiGe Quantum Well Terahertz Emitters pumped by FEL pulses. In: 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, France, 1-6 Sept 2019, ISBN 9781538682869 (doi: 10.1109/IRMMW-THz.2019.8873894)

202771.pdf - Accepted Version



We explore saturable absorption and terahertz photoluminescence emission in a set of n-doped Ge/SiGe asymmetric coupled quantum wells, designed as three-level systems (i.e., quantum fountain emitter). We generate a non-equilibrium population by optical pumping at the 1→3 transition energy using picosecond pulses from a free-electron laser and characterize this effect by measuring absorption as a function of the pump intensity. In the emission experiment we observe weak emission peaks in the 14–25 meV range (3–6 THz) corresponding to the two intermediate intersubband transition energies. The results represent a step towards silicon-based integrated terahertz emitters.

Item Type:Conference Proceedings
Keywords:Quantum cascade lasers, mathematical model, sociology, statistics, silicon, optical pumping, photonics
Glasgow Author(s) Enlighten ID:Rew, Miss Kirsty and Paul, Professor Douglas
Authors: Ciano, C., Montanari, M., Persichetti, L., Di Gaspare, L., Virgilio, M., Bagolini, L., Capellini, G., Zoellner, M., Skibitzki, O., Stark, D., Scalari, G., Faist, J., Rew, K., Paul, D., Grange, T., Birner, S., Pashkin, A., Helm, M., Baldassarre, L., Ortolani, M., and De Seta, M.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Copyright Holders:Copyright © 2019 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
301516Far-infrared Lasers Assembled using SiliconDouglas PaulEuropean Commission (EC)766719ENG - Electronics & Nanoscale Engineering