n-type Ge/SiGe multi quantum-wells for a THz quantum cascade laser

Ciano, C. et al. (2019) n-type Ge/SiGe multi quantum-wells for a THz quantum cascade laser. ECS Transactions, 93(1), pp. 63-66. (doi: 10.1149/09301.0063ecst)

Abstract

Exploiting intersubband transitions in Ge/SiGe quantum cascade devices provides a way to integrate terahertz light emitters into silicon-based technology. With the view to realizing a Ge/SiGe Quantum Cascade Laser, we present the optical and structural properties of n-type strain-symmetrized Ge/SiGe asymmetric coupled quantum wells grown on Si(001) substrates by means of ultrahigh vacuum chemical vapor deposition. We demonstrate the high material quality of strain-symmetrized structures and heterointerfaces as well as control over the inter-well coupling and electron tunneling. Motivated by the promising results obtained on ACQWs, which are the basic building block of a cascade structure, we investigate, both experimentally and theoretically, a Ge/SiGe THz QCL design, optimized through a non-equilibrium Green's function formalism.

• Item Type: Articles (Letter)
• Additional Information: This work is supported by the European Union Horizon 2020 program under grant No. 766719-FLASH Project.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Paul, Professor Douglas
• Authors: Ciano, C., Di Gaspare, L., Montanari, M., Persichetti, L., Baldassarre, L., Ortolani, M., Capellini, G., Skibitzki, O., Zöllner, M., Faist, J., Scalari, G., Stark, D., Paul, D., Rew, K., Moutanabbir, O., Mukherjee, S., Grange, T., Birner, S., Virgilio, M., and De Seta, M.
• Subjects: Q Science > QC Physics
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Semiconductor Devices
• Journal Name: ECS Transactions
• Publisher: Electrochemical Society
• ISSN: 1938-5862
• ISSN (Online): 1938-6737
• Copyright Holders: Copyright © 2019 ECS - The Electrochemical Society
• First Published: First published in ECS Transactions 93(1):63-66
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
301516		Far-infrared Lasers Assembled using Silicon	Douglas Paul	European Commission (EC)	766719	ENG - Electronics & Nanoscale Engineering