Electron State Coupling in asymmetric Ge/SiGe quantum Wells (Conference Presentation)

Persichetti, L. et al. (2019) Electron State Coupling in asymmetric Ge/SiGe quantum Wells (Conference Presentation). Physical Chemistry of Semiconductor Materials and Interfaces XVIII, San Diego, California, United States, 2019. (doi:10.1117/12.2527666)

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Abstract

No abstract available.

Item Type:Conference or Workshop Item
Additional Information:Abstract published in Proceedings Volume 11084, Physical Chemistry of Semiconductor Materials and Interfaces XVIII; 110840B (2019).
Keywords:Semiconductor heterostructures, Quantum Wells, Chemical Vapor deposition, Quatum Cascade Laser
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Persichetti, L., Ciano, C., Virgilio, M., Montanari, M., Gaspare, L. D., Ortolani, M., Baldassarre, L., Zoellner, M., Skibitzki, O., Stark, D., Scalari, G., Faist, J., Rew, K., Paul, D. J., Mukherjee, S., Moutanabbir, O., Scuderi, M., Nicotra, G., Grange, T., Birner, S., Capellini, G., and Seta, M. D.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Publisher:SPIE
Published Online:01 October 2019

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
301516Far-infrared Lasers Assembled using SiliconDouglas PaulEuropean Commission (EC)766719ENG - Electronics & Nanoscale Engineering