A Study of In-situ X-ray Photoelectron Spectroscopy Surface Analysis in Development of Atomic Layer Etch for GaN/AlGaN Based Power Device Fabrication

Li, X. , Hemakumara, D., Fu, Y.-C., Moran, D. and Thayne, I. (2019) A Study of In-situ X-ray Photoelectron Spectroscopy Surface Analysis in Development of Atomic Layer Etch for GaN/AlGaN Based Power Device Fabrication. 11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 12th International Conference on Plasma-Nano Technology & Science (ISPlasma2019 / IC-PLANTS2019), Nagoya, Japan, 17-21 March 2019.

Full text not currently available from Enlighten.

Abstract

No abstract available.

Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Fu, Mr Yen-Chun and Li, Dr Xu and Thayne, Prof Iain and Moran, Dr David and Hemakumara, Miss Dilini
Authors: Li, X., Hemakumara, D., Fu, Y.-C., Moran, D., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Related URLs:

University Staff: Request a correction | Enlighten Editors: Update this record