Multi-channel AlGaN/GaN lateral Schottky barrier diodes on low-resistivity silicon for sub-THz integrated circuits applications

Eblabla, A., Li, X. , Alathbah, M., Wu, Z., Lees, J. and Elgaid, K. (2019) Multi-channel AlGaN/GaN lateral Schottky barrier diodes on low-resistivity silicon for sub-THz integrated circuits applications. IEEE Electron Device Letters, 40(6), pp. 878-880. (doi: 10.1109/LED.2019.2912910)

Abstract

This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q.cm) silicon substrates. The developed technology offers a reduction of 37 % in onset voltage, V ON (from 1.34 to 0.84 V), and 36 % in ON-resistance, R ON (1.52 to 0.97 to Q.mm) as a result of lowering the Schottky barrier height, Φn, when compared to conventional lateral SBDs. No compromise in reverse-breakdown voltage and reverse-bias leakage current performance was observed as both multi-channel and conventional technologies exhibited VBV of (VBV > 30 V) and I R of (I R <; 38 μA/mm), respectively. Furthermore, a precise small-signal equivalent circuit model was developed and verified for frequencies up to 110 GHz. The fabricated devices exhibited cut-off frequencies of up to 0.6 THz, demonstrating the potential use of lateral AlGaN/GaN SBDs on LR silicon for high-efficiency, high-frequency integrated circuits applications.

• Item Type: Articles
• Additional Information: This work was supported by the Engineering and Physical Sciences Research Council under Grant EP/N014820/2 and Grant EP/P006973/1.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Li, Dr Xu
• Authors: Eblabla, A., Li, X., Alathbah, M., Wu, Z., Lees, J., and Elgaid, K.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Electron Device Letters
• Publisher: Institute of Electrical and Electronics Engineers
• ISSN: 0741-3106
• ISSN (Online): 0741-3106
• Copyright Holders: Copyright © 2019 IEEE
• First Published: First published in IEEE Electron Device Letters 40(6):878-880
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher