Improved Performance of GaN Metal-Oxide-Semiconductor Capacitors byPplasma ALD of AlN Interlayer

Hemakumara, D., Li, X. , Floros, K., Cho, S., Guinney, I., Humphreys, C., Thayne, I. G., O'Mahony, A., Knoops, H. and Moran, D. (2019) Improved Performance of GaN Metal-Oxide-Semiconductor Capacitors byPplasma ALD of AlN Interlayer. AVS 19th International Conference on Atomic Layer Deposition (ALD 2019) / 6th International Atomic Layer Etching Workshop (ALE 2019), Washington, USA, 21-24 July 2019.

Abstract

No abstract available.

• Item Type: Conference or Workshop Item
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Li, Dr Xu and Moran, Professor David and Floros, Mr Konstantinos and Hemakumara, Miss Dilini
• Authors: Hemakumara, D., Li, X., Floros, K., Cho, S., Guinney, I., Humphreys, C., Thayne, I. G., O'Mahony, A., Knoops, H., and Moran, D.
• College/School: College of Science and Engineering > School of Engineering; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

Related URLs

• Organisation