Improvement of a nano-scale silicon on insulator field effect transistor performance using electrode, doping and buried oxide engineering

Dideban, D., Karbalaei, M., Moezi, N. and Heidari, H. (2019) Improvement of a nano-scale silicon on insulator field effect transistor performance using electrode, doping and buried oxide engineering. Journal of Nanostructures, (Accepted for Publication)

Full text not currently available from Enlighten.

Abstract

No abstract available.

Item Type:Articles
Status:Accepted for Publication
Refereed:Yes
Glasgow Author(s) Enlighten ID:Heidari, Dr Hadi
Authors: Dideban, D., Karbalaei, M., Moezi, N., and Heidari, H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Nanostructures
Publisher:Nanoscience and Nanotechnology Research Center, University of Kashan
ISSN:2251-7871
ISSN (Online):2251-788X

University Staff: Request a correction | Enlighten Editors: Update this record