Spectrum imaging of high-k dielectric stacks

MacKenzie, M., Craven, A.J., Mccomb, D.W., Hamilton, D.A. and McFadzean, S. (2004) Spectrum imaging of high-k dielectric stacks. In: Institute of Physics Electron Microscopy and Analysis Group Conference, Oxford, UK, 3 -5 Sep 2003, pp. 299-302.

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Abstract

Electron energy loss spectroscopy combined with spectrum imaging gives a powerful technique that can be used to examine the structural, chemical and electronic properties of materials on a sub-nanometre scale. We have used this technique to examine high-k dielectric devices. ELNES from experimental standards have been utilised in the interpretation of the data.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Craven, Professor Alan and McFadzean, Dr Sam
Authors: MacKenzie, M., Craven, A.J., Mccomb, D.W., Hamilton, D.A., and McFadzean, S.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Physics and Astronomy
ISSN:0750309679

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
350671Chemistry, structure and bonding in high-k gate oxide stacksAlan CravenEngineering & Physical Sciences Research Council (EPSRC)GR/S44280/01Physics and Astronomy