Application of spectrum imaging to the study of high-k dielectric stacks

Craven, A.J., MacKenzie, M. and Mccomb, D.W. (2003) Application of spectrum imaging to the study of high-k dielectric stacks. In: Proceedings of the Institute of Physics conference., Cambridge University, 31 March - 3 April 2003, pp. 393-396.

Craven, A.J., MacKenzie, M. and Mccomb, D.W. (2003) Application of spectrum imaging to the study of high-k dielectric stacks. In: Proceedings of the Institute of Physics conference., Cambridge University, 31 March - 3 April 2003, pp. 393-396.

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Abstract

The replacement Of SiO2 as the gate oxide in CMOS by materials with higher permittivity such as HfO2/HfSiO has encountered problems from physical and chemical changes that occur during processing of the gate stack. Spectrum imaging, used in conjunction with the analysis of electron energy loss near edge structure, is shown to be a powerful tool to investigate such changes.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:MacKenzie, Dr Maureen and Craven, Professor Alan
Authors: Craven, A.J., MacKenzie, M., and Mccomb, D.W.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Physics and Astronomy
ISSN:0750309792

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