Fast etching of microscale structures by bombardment with electrosprayed nanodroplets

Grustan Gutierrez, E. , Borrajo-Pelaez, R. and Gamero-Castaño, M. (2014) Fast etching of microscale structures by bombardment with electrosprayed nanodroplets. International Symposium on Microelectronics, 2014(1), pp. 466-470. (doi:10.4071/isom-wa36)

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Abstract

In this article Si substrates protected by Shipley 1827 and Au masks are sputtered with electrosprayed nanodroplets to produce microscale structures. Silicon is used as a benchmark to assess the effect of the physical sputtering of nanodroplets on more interesting chemically inert materials such as SiC and GaN. The use of Shipley 1827 as a patterning mask provides a virtually infinite etching selectivity between substrate and photoresist at the cost of non-perpendicular wall profiles and debris redeposition. After 60 minutes of processing the target at a sputtering rate of 244 nm/min, a fraction of the sputtered material deposits back on the substrate forming a protective layer that stops any further sputtering. In a second set of experiments the selectivity between Si and Au to be used as a potential mask is studied. The maximum selectivity is 64.17, and is obtained at an etching rate of 385 nm/min. An increase of the etching rate produces a sharp drop on the selectivity between Au and Si.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Grustan Gutierrez, Dr Enric
Authors: Grustan Gutierrez, E., Borrajo-Pelaez, R., and Gamero-Castaño, M.
College/School:College of Science and Engineering > School of Engineering > Aerospace Sciences
Journal Name:International Symposium on Microelectronics
Publisher:International Microelectronics Assembly and Packaging Society
ISSN:2380-4505
ISSN (Online):2380-4505

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