Nanoscale Homogeneity and Degradation Process of Two Dimensional Atomically Thin Hexagonal Boron Nitride Dielectric Stacks

Ji, Y., Pan, C., Hui, F., Shi, Y., Jiang, L., Xiao, N., Grustan Gutierrez, E. , Larcher, L. and Lanza, M. (2016) Nanoscale Homogeneity and Degradation Process of Two Dimensional Atomically Thin Hexagonal Boron Nitride Dielectric Stacks. In: 23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2016), Singapore, 18-21 July 2016, pp. 387-391. ISBN 9781467382601 (doi: 10.1109/IPFA.2016.7564323)

Abstract

In this paper we analyze the reliability of atomically thin hexagonal boron nitride (A-BN) dielectric stacks subjected to electrical stresses. The 2D insulating stacks are grown by chemical vapor deposition, meaning that (unlike exfoliated nanosheets) they can cover large areas and are suitable for the fabrication of scalable devices using photolithography tools. By comparing HfO2 and A-BN stacks with similar equivalent oxide thickness we find that the 2D dielectric shows a striking stable conduction when subjected to sequences of ramped voltage stresses, indicating that it is much more stable versus electrical-field-induced defects. These results point A-BN as superb dielectric for electronic devices.

• Item Type: Conference Proceedings
• Additional Information: This work has been supported by the Young 1000 Global Talent Recruitment Program of the Ministry of Education of China, the National Natural Science Foundation of China (grants no. 61502326, 41550110223), the Jiangsu Government (grant no. BK20150343), the Ministry of Finance of China (grant no. SX21400213) and the Young 973 National Program of the Chinese Ministry of Science and Technology (grant no. 2015CB932700).
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Grustan Gutierrez, Dr Enric
• Authors: Ji, Y., Pan, C., Hui, F., Shi, Y., Jiang, L., Xiao, N., Grustan Gutierrez, E., Larcher, L., and Lanza, M.
• College/School: College of Science and Engineering > School of Engineering > Autonomous Systems and Connectivity
• ISSN: 1946-1550
• ISBN: 9781467382601